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GaAs-PD包含高速砷化镓光电探测器和宽动态范围的跨阻放大器，具有低暗电流、高响应度、低电容等优点，密封在4引脚的TO封装内。

型号	探测器材料	光敏尺寸	响应波长-范围	响应度-峰值	上升沿时间	暗电流	封装	封装类型	引脚数	窗口
FCI-H250G-GaAs-100	GaAs	Ø0.1 mm	650 … 860 nm	1650V/W	0.2 ns	-	TO-46	TO	4	Lens / flat
EPD-660-1-0.9	AlGaAs/GaAs	0.62mm²	620 … 700 nm	0.42A/W	40 ns@-1V	40 pA@-1V	-	SMD	2	-
ULMPIN-56-TT-N0101U	GaAs	Ø39 μm	m	0.6A/W	s	0.1 nA	-	Chip	-	-
EPD-660-3-0.5	AlGaAs/GaAs	0.17mm²	605 … 705 nm	0.42A/W	15 ns@-1V	40 pA@-1V	Φ3 Plastic THD	Special	2	Filter , Lens
EPC-660-0.9	AlGaAs/GaAs	0.62mm²	620 … 700 nm	0.2A/W	40 ns@-1V	40 pA@-1V	-	Chip	-	Filter
EPC-660-0.5	AlGaAs/GaAs	0.17mm²	620 … 700 nm	0.2A/W	15 ns@-1V	40 pA@-1V	-	Chip	-	Filter
EPD-660-5-0.9	AlGaAs/GaAs	0.62mm²	605 … 705 nm	0.42A/W	40 ns@-1V	40 pA@-1V	Φ5 Plastic THD	Special	2	Filter , Lens
EPC-880-1.4	AlGaAs/GaAs	1.79mm²	820 … 935 nm	0.27A/W	200 ns@-1V	1 nA@-1V	-	Chip	-	Filter
EPC-880-0.9-1	GaAs	0.72mm²	820 … 935 nm	0.25A/W	15 ns@-1V	1 nA@-1V	-	Chip	-	Filter
EPC-880-0.5	AlGaAs/GaAs	0.17mm²	820 … 935 nm	0.25A/W	15 ns@-1V	1 nA@-1V	-	Chip	-	Filter
EPC-740-0.9	AlGaAs/GaAs	0.62mm²	680 … 770 nm	0.5A/W	15 ns@-1V	40 pA@-5V	-	Chip	-	Filter
EPC-740-0.5	AlGaAs/GaAs	0.17mm²	680 … 770 nm	0.5A/W	15 ns@-1V	40 pA@-5V	-	Chip	-	Filter
FCI-H125G-GaAs-100	GaAs	Ø0.1 mm	650 … 860 nm	1700V/W	0.39 ns	-	TO-46	TO	4	Lens / flat
FCI-H125G-GaAs-100/FC	GaAs	Ø0.1 mm	650 … 860 nm	1700A/W	0.39 ns	-	TO-46	Special	4	-
ULMPIN-10-TT-N0101U	GaAs	Ø70 μm	840 … 860 nm	0.6A/W	0.32 ns@-5V	0.02 nA@-5V	-	Chip	-	-
ULMPIN-04-TT-U0101U	GaAs	Ø100 μm	830 … 860 nm	0.5A/W	0.44 ns@-5V	3 nA@-5V	-	Chip	-	-
ULMPIN-14-TT-N0101U	-	-	-	-	-	-	-	-	-	-
ULMPIN-25-TT-N0101U	-	-	-	-	-	-	-	-	-	-