通用型

PbS通用型属于非制冷型光电导单元素PbS探测器,可在室温下工作。该系列广泛应用于分析、安全和辐射测量等领域,尤其是需要大光敏面的应用场景时。

型号
光敏尺寸
响应度-峰值
响应波长-峰值
比探测率
时间常数
封装
封装类型
窗口
引脚数
PBS-060 6 × 6 mm 5.0E+4V/W 2.4 μm 6.0E+10cm√Hz/W 300 μs TO-8 TO - 3
PBS-030 3 × 3 mm 1.0E+5V/W 2.4 μm 1.0E+11cm√Hz/W 300 μs TO-5 TO - 3
C-PB25G1010 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.10E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs Chip Chip - 2
C-PB25X1010 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.10E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs Chip Chip - 2
C-PB25X2020 2 × 2 mm 4.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.10E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs Chip Chip - 2
PB25S10104S 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-46 TO - 3
PB25S20209S 2 × 2 mm 4.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3
PB25S30309S 3 × 3 mm 2.6E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3
PB25S50508M 5 × 5 mm 1.6E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 9.0E+10cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-8 TO - 6
PB25S60608M 6 × 6 mm 1.4E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 9.0E+10cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-8 TO - 6
PB25G20509 2 × 5 mm 1.2E+05V/W@50V/mm,0.5MΩ,650Hz 2.4 μm 7.0E+10cm√Hz/W@50V/mm,0.5MΩ,650Hz 200 μs TO-39 TO - 3
PB25G10254 1 × 2.5 mm 3.3E+05V/W@50V/mm,0.5MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,0.5MΩ,650Hz 200 μs TO-46 TO - 3
PB25G10259 1 × 2.5 mm 3.3E+05V/W@50V/mm,0.5MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,0.5MΩ,650Hz 200 μs TO-39 TO - 3
PBS-100 10 × 10 mm 1.0E+4V/W 2.4 μm 6.0E+10cm√Hz/W <500 μs TO-5 TO - 3
PBS010050TO5 1 × 5 mm 3.50E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs TO-5 TO - 3
PbS005005BC 0.5 × 0.5 mm 16.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip - 0
PbS010010BC 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip - 0
PbS020020BC 2 × 2 mm 4.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip - 0
PbS030030BC 3 × 3 mm 3.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip - 0
PbS060060BC 6 × 6 mm 1.40E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip - 0
PbS100100BC 10 × 10 mm 0.60E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip - 0
PbS010050BC 1 × 5 mm 3.50E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip - 0
PbS030030BC_PCB 3 × 3 mm 3.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip -
PbS005005BC_PCB 0.5 × 0.5 mm 16.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs Chip Chip -
PbS005005TO5 0.5 × 0.5 mm 16.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs TO-5 TO - 3
PbS010010TO5 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs TO-5 TO - 3
PbS020020TO5 2 × 2 mm 4.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs TO-5 TO - 3
PbS030030TO5 3 × 3 mm 3.0E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs TO-5 TO - 3
PbS060060TO8 6 × 6 mm 1.4E+05V/W@50V/mm,1MΩ,620Hz 2.7 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,620Hz 200 μs TO-8 TO - 12
PB25G20209 2 × 2 mm 4.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3
PB25G10509 1 × 5 mm 1.05E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 7.0E+10cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3
PB25G10104 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-46 TO - 3
PB25S10109S 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3
PB25G10109 1 × 1 mm 8.0E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3
PB25G3030 3 × 3 mm 2.6E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3
PB25G38389 3.8 × 3.8 mm 1.72E+05V/W@50V/mm,1MΩ,650Hz 2.4 μm 1.1E+11cm√Hz/W@50V/mm,1MΩ,650Hz 200 μs TO-39 TO - 3