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型号
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光敏尺寸
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响应波长-峰值
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响应度-峰值
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比探测率
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时间常数
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封装
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封装类型
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引脚数
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窗口
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|---|---|---|---|---|---|---|---|---|---|
| PB45S10109S | 1 × 1 mm | 4 μm | 4.2E+4V/W@50V/mm,1MΩ,1kHz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | TO-39 | TO | 3 | No Window |
| PB45S10104S | 1 × 1 mm | 4 μm | 4.2E+4V/W@50V/mm,1MΩ,1kHz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | TO-46 | TO | 3 | - |
| PB45S20209S | 2 × 2 mm | 4 μm | 2.1E+04V/W@50V/mm,1MΩ,1kHz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | TO-39 | TO | 3 | - |
| PB45S30309S | 3 × 3 mm | 4 μm | 1.4E+04V/W@50V/mm,1MΩ,1kHz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | TO-39 | TO | 3 | - |
| PB45S50508M | 5 × 5 mm | 4 μm | 8400V/W@50V/mm,1MΩ,1kHz | 1.2E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | TO-8 | TO | 2 | - |
| PB45S60608M | 6 × 6 mm | 4 μm | 7000V/W@50V/mm,1MΩ,1kHz | 1.2E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | TO-8 | TO | 2 | - |
| LEPTON 1*1 | 1 × 1 mm | 3.7 μm | 9.0E+3V/W@-10V | 2E+9cm√Hz/W | <2 μs | TO-5 | TO | 4 | - |
| LEPTON 2*2 | 2 × 2 mm | 3.7 μm | 4.5E+3V/W@-10V | 2E+9cm√Hz/W | <2 μs | TO-5 | TO | 4 | - |
| PBSE-010 | 1 × 1 mm | 4 μm | >10000V/W | >5.0E+09cm√Hz/W | 15 μs | TO-5 | TO | 3 | - |
| PBSE-050 | 5 × 5 mm | 4 μm | 1000V/W@50V/mm,1MΩ,1kHz | 2E+09cm√Hz/W | μs | TO-8 | TO | 3 | - |
| PbSe010010BC | 1 × 1 mm | 3.8 μm | 4.5E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | Chip | Chip | 2 | - |
| PbSe020020BC | 2 × 2 mm | 3.8 μm | 4.0E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | Chip | Chip | 2 | - |
| PbSe030030BC | 3 × 3 mm | 3.8 μm | 1.5E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | Chip | Chip | 2 | - |
| PbSe060060BC | 3 × 3 mm | 3.8 μm | 0.8E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | Chip | Chip | 2 | - |
| PbSe010010TO5 | 1 × 1 mm | 3.8 μm | 4.5E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | TO-5 | TO | 3 | - |
| PbSe020020TO5 | 2 × 2 mm | 3.8 μm | 4.0E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | TO-5 | TO | 3 | - |
| PbSe030030TO5 | 3 × 3 mm | 3.8 μm | 1.5E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | TO-5 | TO | 3 | - |
| PbSe060060TO8 | 6 × 6 mm | 3.8 μm | 0.8E+4V/W@50V/mm,1MΩ,620Hz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,620Hz | 4 μs | TO-8 | TO | 12 | - |
| PB45X10104S | 1 × 1 mm | 4 μm | 4.2E+04V/W@50V/mm,1MΩ,1kHz | 1.8E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | TO-46 | TO | 3 | No Window |
| C-PB45X2020 | 2 × 2 mm | 4 μm | 2.10E+4V/W@50V/mm,1MΩ,1kHz | 1.80E+10cm√Hz/W@50V/mm,1MΩ,1kHz | 4 μs | Chip | Chip | - | No Window |
| LP-1M-01-SMD | 1 × 1 mm | 3.7 μm | 9E+3V/W@-10V | 0.2E+10cm√Hz/W | s | Chip | Special | - | |
| LP-1M-02-SMD | 2 × 2 mm | 3.7 μm | 4.5E+3V/W@-10V | 0.2E+10cm√Hz/W | <2 μs | Chip | Special | - | |
| C-PB45X1010 | 1 × 1 mm | 4 μm | 4.2E+04V/W@50V/mm,1MΩ,1kHz | 1.8E+10cm√Hz/W | 4 μs | Chip | Chip | - | No Window |
